Transforming XML file: NeuroMLFiles/Examples/ChannelML/KA_Channel.xml
using XSL file:
NeuroMLFiles/Schemata/v1.8.1/Level3/NeuroML_Level3_v1.8.1_HTML.xsl
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Converting the file: KA_Channel.xml
General notes 
Notes present in ChannelML file 
 A channel from Maex, R and De Schutter, E. Synchronization of Golgi and Granule Cell Firing in a
Detailed Network Model of the Cerebellar Granule Cell Layer 
Unit system of ChannelML file 
This can be either SI Units or Physiological Units (milliseconds, centimeters, millivolts, etc.) 
 Physiological Units 
Channel: Gran_KA_98
Name  Gran_KA_98 
Status 
Status of element in file 
 Stable
Comment: Verified equivalence of NEURON and GENESIS mapping to orig GENESIS impl from www.tnb.ua.ac.be Comment: Updated to post v1.7.3 new ChannelML format Contributor: Padraig Gleeson 
Description 
As described in the ChannelML file 
 Atype K channel, with rate equations expressed in tau and inf form 
Authors 
Authors of original model: 
Maex, R. 
De Schutter, E. 
Translators of the model to NeuroML: 
Padraig Gleeson
(UCL)
p.gleeson  at  ucl.ac.uk 

Referenced publication  Maex, R and De Schutter, E.
Synchronization of Golgi and Granule Cell Firing in a Detailed Network Model of the
cerebellar Granule Cell Layer. J Neurophysiol, Nov 1998; 80: 2521  2537
Pubmed

Reference in NeuronDB 
K channels

Current voltage relationship  ohmic 
Ion involved in channel 
The ion which is actually flowing through the channel and its default reversal potential.
Note that the reversal potential will normally depend on the internal and external concentrations of the ion at the segment on which the channel is placed. 
 k (default E_{k} = 90 mV)

Default maximum conductance density 
Note that the conductance density of the channel will be set when it is placed on the cell. 
 G_{max} = 1.14567 mS cm^{2} 
Conductance expression 
Expression giving the actual conductance as a function of time and voltage 
 G_{k}(v,t) = G_{max}
* m(v,t)
^{3} * h(v,t)

Current due to channel 
Ionic current through the channel 
 I_{k}(v,t) =
G_{k}(v,t) * (v  E_{k}) 
Q10 scaling 
Q10 scaling affects the tau in the rate equations. It allows rate equations experimentally calculated at one temperature
to be used at a different temperature. 

Q10 adjustment applied to gates:  all 
Q10_factor:  1 
Experimental temperature (at which rate constants below were determined):  17.350264793 ^{o}C 
Expression for tau at T using tauExp as calculated from rate equations: 
tau(T) = tauExp / 1^((T  17.350264793)/10) 

Voltage offset 
This introduces a shift in the voltage dependence of the rate equations.
If, for example, the equation parameters being used in a model were from a different species,
this offset can be introduced to alter the firing threshold to something closer to the species
being modelled. See mappings for details. 
 10 mV 
Gate: m
The equations below determine the dynamics of gating state m

Instances of gating elements  3 
Closed state  m0 
Open state  m 

Transition time course: tau from m0 to m 
Generic expression  tau(v) = 0.410 * ((exp (( ((v) + 43.5) / (42.8))))) + 0.167 

Transition steady state: inf from m0 to m 
Expression  inf(v) = A / (1 + exp((vV_{1/2})/B)) (sigmoid) 
Parameter values 
A = 1 ms^{1}
B = 19.8 mV
V_{1/2} = 46.7 mV

Substituted 
inf(v) =

1

1+ e^{ (
v  (46.7))/19.8}


Gate: h
The equations below determine the dynamics of gating state h

Instances of gating elements  1 
Closed state  h0 
Open state  h 

Transition time course: tau from h0 to h 
Generic expression  tau(v) = 10.8 + (0.03 * v) + (1 / (57.9 * (exp (v *0.127)) + (134e6 * (exp (v * 0.059))))) 

Transition steady state: inf from h0 to h 
Expression  inf(v) = A / (1 + exp((vV_{1/2})/B)) (sigmoid) 
Parameter values 
A = 1 ms^{1}
B = 8.4 mV
V_{1/2} = 78.8 mV

Substituted 
inf(v) =

1

1+ e^{ (
v  (78.8))/8.4}



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