Transforming XML file: NeuroMLFiles/Examples/ChannelML/GateDepQ10.xml using XSL file: NeuroMLFiles/Schemata/v1.8.1/Level3/NeuroML_Level3_v1.8.1_HTML.xsl

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Converting the file: GateDepQ10.xml

General notes
Notes present in ChannelML file
ChannelML file containing a single Channel description

Unit system of ChannelML file
This can be either SI Units or Physiological Units (milliseconds, centimeters, millivolts, etc.)
Physiological Units

Channel: NaConduction

NameNaConduction
Description
As described in the ChannelML file
Example showing a channel with different Q10 adjustments for each gate, based on HH Na example
Current voltage relationshipohmic
Ion involved in channel
The ion which is actually flowing through the channel and its default reversal potential. Note that the reversal potential will normally depend on the internal and external concentrations of the ion at the segment on which the channel is placed.
na (default Ena = 50 mV)
Default maximum conductance density
Note that the conductance density of the channel will be set when it is placed on the cell.
Gmax = 120 mS cm-2
Conductance expression
Expression giving the actual conductance as a function of time and voltage
Gna(v,t) = Gmax * m(v,t) 3 * h(v,t)
Current due to channel
Ionic current through the channel
Ina(v,t) = Gna(v,t) * (v - Ena)
Q10 scaling
Q10 scaling affects the tau in the rate equations. It allows rate equations experimentally calculated at one temperature to be used at a different temperature.
Q10 adjustment applied to gate:    m
Q10_factor:    3
Experimental temperature (at which rate constants below were determined):    17 oC
Expression for tau at T using tauExp as calculated from rate equations:    tau(T) = tauExp / 3^((T - 17)/10)
Q10 scaling
Q10 scaling affects the tau in the rate equations. It allows rate equations experimentally calculated at one temperature to be used at a different temperature.
Q10 adjustment applied to gate:    h
Q10_factor:    3.5
Experimental temperature (at which rate constants below were determined):    17 oC
Expression for tau at T using tauExp as calculated from rate equations:    tau(T) = tauExp / 3.5^((T - 17)/10)


Gate: m

The equations below determine the dynamics of gating state m

Instances of gating elements3
Closed statem0
Open statem   (fractional conductance: 1)
 
    Transition: alpha from m0 to m
Expressionalpha(v) = A*((v-V1/2)/B) / (1 - exp(-(v-V1/2)/B))    (exp_linear)
Parameter values A = 1 ms-1   B = 10 mV   V1/2 = -40 mV
Substituted
alpha(v) = 1 * ( v - (-40)) / 10
1- e -(( v - (-40)) / 10)
 
    Transition: beta from m to m0
Expressionbeta(v) = A*exp((v-V1/2)/B)    (exponential)
Parameter values A = 4 ms-1   B = -18 mV   V1/2 = -65 mV
Substituted beta(v) = 4 * e (v - (-65))/-18


Gate: h

The equations below determine the dynamics of gating state h

Instances of gating elements1
Closed stateh0
Open stateh   (fractional conductance: 1)
 
    Transition: alpha from h0 to h
Expressionalpha(v) = A*exp((v-V1/2)/B)    (exponential)
Parameter values A = 0.07 ms-1   B = -20 mV   V1/2 = -65 mV
Substituted alpha(v) = 0.07 * e (v - (-65))/-20
 
    Transition: beta from h to h0
Expressionbeta(v) = A / (1 + exp((v-V1/2)/B))    (sigmoid)
Parameter values A = 1 ms-1   B = -10 mV   V1/2 = -35 mV
Substituted
beta(v) = 1
1+ e ( v - (-35))/-10



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