Transforming XML file: NeuroMLFiles/Examples/ChannelML/GateDepQ10.xml
using XSL file:
NeuroMLFiles/Schemata/v1.8.1/Level3/NeuroML_Level3_v1.8.1_HTML.xsl
View original file before transform
Converting the file: GateDepQ10.xml
General notes 
Notes present in ChannelML file 
 ChannelML file containing a single Channel description 
Unit system of ChannelML file 
This can be either SI Units or Physiological Units (milliseconds, centimeters, millivolts, etc.) 
 Physiological Units 
Channel: NaConduction
Name  NaConduction 
Description 
As described in the ChannelML file 
 Example showing a channel with different Q10 adjustments for each gate, based on HH Na example 
Current voltage relationship  ohmic 
Ion involved in channel 
The ion which is actually flowing through the channel and its default reversal potential.
Note that the reversal potential will normally depend on the internal and external concentrations of the ion at the segment on which the channel is placed. 
 na (default E_{na} = 50 mV)

Default maximum conductance density 
Note that the conductance density of the channel will be set when it is placed on the cell. 
 G_{max} = 120 mS cm^{2} 
Conductance expression 
Expression giving the actual conductance as a function of time and voltage 
 G_{na}(v,t) = G_{max}
* m(v,t)
^{3} * h(v,t)

Current due to channel 
Ionic current through the channel 
 I_{na}(v,t) =
G_{na}(v,t) * (v  E_{na}) 
Q10 scaling 
Q10 scaling affects the tau in the rate equations. It allows rate equations experimentally calculated at one temperature
to be used at a different temperature. 

Q10 adjustment applied to gate:  m 
Q10_factor:  3 
Experimental temperature (at which rate constants below were determined):  17 ^{o}C 
Expression for tau at T using tauExp as calculated from rate equations: 
tau(T) = tauExp / 3^((T  17)/10) 

Q10 scaling 
Q10 scaling affects the tau in the rate equations. It allows rate equations experimentally calculated at one temperature
to be used at a different temperature. 

Q10 adjustment applied to gate:  h 
Q10_factor:  3.5 
Experimental temperature (at which rate constants below were determined):  17 ^{o}C 
Expression for tau at T using tauExp as calculated from rate equations: 
tau(T) = tauExp / 3.5^((T  17)/10) 

Gate: m
The equations below determine the dynamics of gating state m

Instances of gating elements  3 
Closed state  m0 
Open state  m (fractional conductance: 1) 

Transition: alpha from m0 to m 
Expression  alpha(v) = A*((vV_{1/2})/B) / (1  exp((vV_{1/2})/B)) (exp_linear) 
Parameter values 
A = 1 ms^{1}
B = 10 mV
V_{1/2} = 40 mV

Substituted 
alpha(v) =

1 * (
v  (40)) / 10

1 e^{ ((
v  (40)) / 10)}



Transition: beta from m to m0 
Expression  beta(v) = A*exp((vV_{1/2})/B) (exponential) 
Parameter values 
A = 4 ms^{1}
B = 18 mV
V_{1/2} = 65 mV

Substituted 
beta(v) =
4 * e ^{
(v  (65))/18} 
Gate: h
The equations below determine the dynamics of gating state h

Instances of gating elements  1 
Closed state  h0 
Open state  h (fractional conductance: 1) 

Transition: alpha from h0 to h 
Expression  alpha(v) = A*exp((vV_{1/2})/B) (exponential) 
Parameter values 
A = 0.07 ms^{1}
B = 20 mV
V_{1/2} = 65 mV

Substituted 
alpha(v) =
0.07 * e ^{
(v  (65))/20} 

Transition: beta from h to h0 
Expression  beta(v) = A / (1 + exp((vV_{1/2})/B)) (sigmoid) 
Parameter values 
A = 1 ms^{1}
B = 10 mV
V_{1/2} = 35 mV

Substituted 
beta(v) =

1

1+ e^{ (
v  (35))/10}



Time to transform file: 0.12 secs